ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,660, issued on Nov. 3, was assigned to The 13th Research Institute of China Electronics Technology Group Corp. (Shijiazhuang, China). "Purif... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,661, issued on Nov. 3, was assigned to HUBEI RT ADVANCED MATERIALS GROUP COMPANY Ltd. (Huangshi, China). "Lithium iron phosphate lithium-ric... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,662, issued on Nov. 3, was assigned to NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan). "Porous carbon material and manufacturing method the... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,663, issued on Nov. 3, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan) and UNIVERSITY OF TSUKUBA (Tsukuba, Japan). "Method ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,664, issued on Nov. 3, was assigned to Saudi Arabian Oil Co. (Dhahran, Saudi Arabia). "Converting stranded natural gas to carbon particles" ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,665, issued on Nov. 3, was assigned to Nabors Energy Transition Solutions LLC (Houston). "Carbon-based nanomaterial composition and methods ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,666, issued on Nov. 3, was assigned to UNIWERSYTET JAGIELLONSKI (Cracow, Poland). "Method for producing graphene nanostructures" was invente... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,667, issued on Nov. 3, was assigned to UNIVERSITY OF HONG KONG VERSITECH Ltd. (Hong Kong, Hong Kong). "Efficient purification method for nan... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,668, issued on Nov. 3, was assigned to L'Air Liquide Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude (Paris). "Me... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,780,669, issued on Nov. 3, was assigned to BTR NEW MATERIAL GROUP Co. LTD. (Shenzhen, China). "Anode material, preparation method thereof, and s... Read More